Heat dissipation device having a thermally conductive structure and a thermal isolation structure in the thermally conductive structure

ABSTRACT

A heat dissipation device may be formed as a thermally conductive structure having at least one thermal isolation structure extending at least partially through the thermally conductive structure. The heat dissipation device may be thermally connected to a plurality of integrated circuit devices, such that the at least one thermal isolation structure is positioned between at least two integrated circuit devices. The heat dissipation device allows for heat transfer away from each of the plurality of integrated circuit devices, such as in a z-direction within the thermally conductive structure, while substantially preventing heat transfer in either the x-direction and/or the y-direction within the thermally isolation structure, such that thermal cross-talk between integrated circuit devices is reduced.

TECHNICAL FIELD

Embodiments of the present description generally relate to the removalof heat from integrated circuit devices, and, more particularly, to aheat dissipation device, having a thermally conductive structure withthermal isolation portions formed therein, which is used to remove heatfrom a plurality of integrated circuit devices.

BACKGROUND

Higher performance, lower cost, increased miniaturization of integratedcircuit components, and greater packaging density of integrated circuitsare ongoing goals of the integrated circuit industry. As these goals areachieved, integrated circuit devices become smaller. Accordingly, thedensity of power consumption of the components in the integrated circuitdevices has increased, which, in turn, increases the average junctiontemperature of the integrated circuit device. If the temperature of theintegrated circuit device becomes too high, the integrated circuits maybe damaged or destroyed. This issue becomes even more critical whenmultiple integrated circuit devices are incorporated in a singleintegrated circuit package. In such a configuration, heat is generallyremoved from the multiple integrated circuit devices with a singlethermally conductive heat dissipation device, such as a heat spreader.However, differing integrated circuit devices within the integratedcircuit package may have differing operating temperatures. Thus, a highheat generating integrated circuit device may dominate the heattransferred into the thermally conductive heat dissipation device, whichmay hamper the transfer of heat into the thermally conductive heatdissipation device by other integrated circuit devices in the integratedcircuit package, e.g. thermal cross-talk. As such, the other integratedcircuit devices may exceed their temperature limits and be damaged ordestroyed, leading to the failure of the entire integrated circuitpackage.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter of the present disclosure is particularly pointed outand distinctly claimed in the concluding portion of the specification.The foregoing and other features of the present disclosure will becomemore fully apparent from the following description and appended claims,taken in conjunction with the accompanying drawings. It is understoodthat the accompanying drawings depict only several embodiments inaccordance with the present disclosure and are, therefore, not to beconsidered limiting of its scope. The disclosure will be described withadditional specificity and detail through use of the accompanyingdrawings, such that the advantages of the present disclosure can be morereadily ascertained, in which:

FIG. 1 is a side cross-sectional view of an integrated circuit packageincluding a heat dissipation device comprising a thermally conductivestructure having at least one thermal isolation structure extending intothe heat dissipation device, wherein the thermal isolation structurecomprises a trench, according to one embodiment of the presentdescription.

FIGS. 2-4 are cross-sectional views along line 2-2 of FIG. 1 of variousconfigurations of the thermal isolation structures, according to variousembodiments of the present description.

FIG. 5 is a side cross-sectional view of an integrated circuit packageincluding a heat dissipation device comprising a thermally conductivestructure having at least one thermal isolation structure extending intothe heat dissipation device, wherein the thermal isolation structurecomprises a trench filled with a thermally non-conductive material,according to an embodiment of the present description.

FIG. 6 is a side cross-sectional view of an integrated circuit packageincluding a heat dissipation device comprising a thermally conductivestructure having at least one thermal isolation structure extending intothe heat dissipation device, wherein the thermal isolation structurecomprises a trench filled with a thermally non-conductive material thatextends through the thermally conductive structure, according to anotherembodiment of the present description.

FIG. 7 is a side cross-sectional view of an integrated circuit packageincluding a heat dissipation device comprising a thermally conductivestructure having at least one thermal isolation structure, wherein theheat dissipation device is in thermal contact with a stacked integratedcircuit device configuration, according to another embodiment of thepresent description.

FIG. 8 is a side cross-sectional view of an integrated circuit packageincluding a heat dissipation device comprising a thermally conductivestructure having at least one thermal isolation structure, wherein theheat dissipation device is in thermal contact with a stacked integratedcircuit device configuration disposed in a mold material, according toanother embodiment of the present description.

FIG. 9 is a flow chart of a process for fabricating an integratedcircuit package, according to the present description.

FIG. 10 is an electronic device/system, according to an embodiment ofthe present description.

DESCRIPTION OF EMBODIMENTS

In the following detailed description, reference is made to theaccompanying drawings that show, by way of illustration, specificembodiments in which the claimed subject matter may be practiced. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the subject matter. It is to be understood thatthe various embodiments, although different, are not necessarilymutually exclusive. For example, a particular feature, structure, orcharacteristic described herein, in connection with one embodiment, maybe implemented within other embodiments without departing from thespirit and scope of the claimed subject matter. References within thisspecification to “one embodiment” or “an embodiment” mean that aparticular feature, structure, or characteristic described in connectionwith the embodiment is included in at least one implementationencompassed within the present invention. Therefore, the use of thephrase “one embodiment” or “in an embodiment” does not necessarily referto the same embodiment. In addition, it is to be understood that thelocation or arrangement of individual elements within each disclosedembodiment may be modified without departing from the spirit and scopeof the claimed subject matter. The following detailed description is,therefore, not to be taken in a limiting sense, and the scope of thesubject matter is defined only by the appended claims, appropriatelyinterpreted, along with the full range of equivalents to which theappended claims are entitled. In the drawings, like numerals refer tothe same or similar elements or functionality throughout the severalviews, and that elements depicted therein are not necessarily to scalewith one another, rather individual elements may be enlarged or reducedin order to more easily comprehend the elements in the context of thepresent description.

The terms “over”, “to”, “between” and “on” as used herein may refer to arelative position of one layer with respect to other layers. One layer“over” or “on” another layer or bonded “to” another layer may bedirectly in contact with the other layer or may have one or moreintervening layers. One layer “between” layers may be directly incontact with the layers or may have one or more intervening layers.

The term “package” generally refers to a self-contained carrier of oneor more dice, where the dice are attached to the package substrate, andmay be encapsulated for protection, with integrated or wire-bonedinterconnects between the dice and leads, pins or bumps located on theexternal portions of the package substrate. The package may contain asingle die, or multiple dice, providing a specific function. The packageis usually mounted on a printed circuit board for interconnection withother packaged integrated circuits and discrete components, forming alarger circuit.

Here, the term “cored” generally refers to a substrate of an integratedcircuit package built upon a board, card or wafer comprising anon-flexible stiff material. Typically, a small printed circuit board isused as a core, upon which integrated circuit device and discretepassive components may be soldered. Typically, the core has viasextending from one side to the other, allowing circuitry on one side ofthe core to be coupled directly to circuitry on the opposite side of thecore. The core may also serve as a platform for building up layers ofconductors and dielectric materials.

Here, the term “coreless” generally refers to a substrate of anintegrated circuit package having no core. The lack of a core allows forhigher-density package architectures. as the through-vias haverelatively large dimensions and pitch compared to high-densityinterconnects.

Here, the term “land side”, if used herein, generally refers to the sideof the substrate of the integrated circuit package closest to the planeof attachment to a printed circuit board, motherboard, or other package.This is in contrast to the term “die side”, which is the side of thesubstrate of the integrated circuit package to which the die or dice areattached.

Here, the term “dielectric” generally refers to any number ofnon-electrically conductive materials that make up the structure of apackage substrate. For purposes of this disclosure, dielectric materialmay be incorporated into an integrated circuit package as layers oflaminate film or as a resin molded over integrated circuit dice mountedon the substrate.

Here, the term “metallization” generally refers to metal layers formedover the dielectric material of the package substrate. The metal layersare generally patterned to form metal structures such as traces and bondpads. The metallization of a package substrate may be confined to asingle layer or in multiple layers separated by layers of dielectric.

Here, the term “bond pad” generally refers to metallization structuresthat terminate integrated traces and vias in integrated circuit packagesand dies. The term “solder pad” may be occasionally substituted for“bond pad” and carries the same meaning.

Here, the term “solder bump” generally refers to a solder layer formedon a bond pad. The solder layer typically has a round shape, hence theterm “solder bump”.

Here, the term “substrate” generally refers to a planar platformcomprising dielectric and metallization structures. The substratemechanically supports and electrically couples one or more IC dies on asingle platform, with encapsulation of the one or more IC dies by amoldable dielectric material. The substrate generally comprises solderbumps as bonding interconnects on both sides. One side of the substrate,generally referred to as the “die side”, comprises solder bumps for chipor die bonding. The opposite side of the substrate, generally referredto as the “land side”, comprises solder bumps for bonding the package toa printed circuit board.

Here, the term “assembly” generally refers to a grouping of parts into asingle functional unit. The parts may be separate and are mechanicallyassembled into a functional unit, where the parts may be removable. Inanother instance, the parts may be permanently bonded together. In someinstances, the parts are integrated together.

Throughout the specification, and in the claims, the term “connected”means a direct connection, such as electrical, mechanical, or magneticconnection between the things that are connected, without anyintermediary devices.

The term “coupled” means a direct or indirect connection, such as adirect electrical, mechanical, magnetic or fluidic connection betweenthe things that are connected or an indirect connection, through one ormore passive or active intermediary devices.

The term “circuit” or “module” may refer to one or more passive and/oractive components that are arranged to cooperate with one another toprovide a desired function. The term “signal” may refer to at least onecurrent signal, voltage signal, magnetic signal, or data/clock signal.The meaning of “a,” “an,” and “the” include plural references. Themeaning of “in” includes “in” and “on.”

The vertical orientation is in the z-direction and it is understood thatrecitations of “top”, “bottom”, “above” and “below” refer to relativepositions in the z-dimension with the usual meaning. However, it isunderstood that embodiments are not necessarily limited to theorientations or configurations illustrated in the figure.

The terms “substantially,” “close,” “approximately,” “near,” and“about,” generally refer to being within +/−10% of a target value(unless specifically specified). Unless otherwise specified the use ofthe ordinal adjectives “first,” “second,” and “third,” etc., to describea common object, merely indicate that different instances of likeobjects are being referred to, and are not intended to imply that theobjects so described must be in a given sequence, either temporally,spatially, in ranking or in any other manner.

For the purposes of the present disclosure, phrases “A and/or B” and “Aor B” mean (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

Views labeled “cross-sectional”, “profile” and “plan” correspond toorthogonal planes within a cartesian coordinate system. Thus,cross-sectional and profile views are taken in the x-z plane, and planviews are taken in the x-y plane. Typically, profile views in the x-zplane are cross-sectional views. Where appropriate, drawings are labeledwith axes to indicate the orientation of the figure.

Embodiments of the present description may include a heat dissipationdevice, comprising a thermally conductive structure having at least onethermal isolation structure extending at least partially through thethermally conductive structure. The heat dissipation device may bethermally connected to a plurality of integrated circuit devices suchthat the at least one thermal isolation structure is positioned betweenat least two integrated circuit devices. In one embodiment, thethermally conductive structure allows for heat transfer away from eachof the plurality of integrated circuit devices, such as in az-direction, while the thermal isolation structure substantiallyprevents heat transfer in the x-direction and/or the y-direction, suchthat thermal cross-talk between integrated circuit devices is reduced.

In the production of integrated circuit packages, integrated circuitdevices are generally mounted on substrates, which provide electricalcommunication routes between the integrated circuit devices and withexternal components. As shown in FIG. 1, an integrated circuit package100 may comprise a plurality of integrated circuit devices (illustratedas elements 1101, 1102, and 1103), such as microprocessors, chipsets,graphics devices, wireless devices, memory devices, application specificintegrated circuits, combinations thereof, stacks thereof, or the like,attached to a first surface 122 of a substrate 120, such as aninterposer, a printed circuit board, a motherboard, and the like,through a plurality of interconnects 126, such as reflowable solderbumps or balls, in a configuration generally known as a flip-chip orcontrolled collapse chip connection (“C4”) configuration. Thedevice-to-substrate interconnects 126 may extend from bond pads (notshown) on a first surface 112 of each of the integrated circuit devices1101, 1102, and 1103 and bond pads (not shown) on the substrate firstsurface 122. The integrated circuit device bond pads (not shown) of eachof the integrated circuit devices 1101, 1102, and 1103 may be inelectrical communication with circuitry (not shown) within theintegrated circuit devices 1101, 1102, and 1103. The substrate 120 mayinclude at least one conductive route 128 extending therethrough to formelectrical connections from at least one integrated circuit device 1101,1102, and 1103 to external components (not shown) and/or between atleast two of the integrated circuit devices 1101, 1102, and 1103.

The substrate 120 may be primarily composed of any appropriatedielectric material, including, but not limited to, bismaleiminetriazine resin, fire retardant grade 4 material, polyimide materials,glass reinforced epoxy matrix material, and the like, as well aslaminates or multiple layers thereof. The substrate conductive routes128 may be composed of any conductive material, including but notlimited to metals, such as copper and aluminum, and alloys thereof. Aswill be understood to those skilled in the art, the substrate conductiveroutes 128 may be formed as a plurality of conductive traces (not shown)formed on layers of dielectric material (constituting the dielectricmaterial of the substrate 120), which are connected by conductive vias(not shown). Furthermore, the substrate 120 may be either a cored or acoreless substrate.

The device-to-substrate interconnects 126 can be made of any appropriatematerial, including, but not limited to, solders materials. The soldermaterials may be any appropriate material, including but not limited to,lead/tin alloys, such as 63% tin/37% lead solder, and high tin contentalloys (e.g. 90% or more tin), such as tin/bismuth, eutectic tin/silver,ternary tin/silver/copper, eutectic tin/copper, and similar alloys. Whenthe integrated circuit devices 1101, 1102, and 1103 are attached to thesubstrate 120 with device-to-substrate interconnects 126 made of solder,the solder is reflowed, either by heat, pressure, and/or sonic energy tosecure the solder between the integrated circuit devices 1101, 1102, and1103 and the substrate 120.

As further illustrated in FIG. 1 and according to one embodiment of thepresent description, a heat dissipation device 140 may be thermallycoupled with the second surfaces 114 (opposing the first surfaces 112)of the integrated circuit devices 1101, 1102, and 1103. The heatdissipation device 140 may comprise a thermally conductive structure 150having a first surface 152 and an opposing second surface 154, and atleast one thermal isolation structure 160 extending into the thermallyconductive structure 150 from the first surface 152 thereof. In oneembodiment of the present description, the thermal isolation structure160 may comprise a trench 170. In an embodiment of the presentdescription, the trench 170 may not extend entirely through thethermally conductive structure 150. In one embodiment illustrated inFIG. 1, the trench 170 may be defined by at least two sidewalls 172 and174 and at least one surface 176 extending between the sidewalls 172 and174. The trench 170 may be formed by any technique known in the art,including, but not limited to stamping, skiving, molding, and the like.It is understood that the trench 170 may be formed during the formationof the heat dissipation device 140 or after the fabrication of the heatdissipation device 140. It is further understood that a length L (e.g.length of sidewalls 172 and 174) and a width W (e.g. distance betweensidewalls 172 and 174) may be adjusted to achieve a desired thermalperformance of the heat dissipation device 140.

In one embodiment, the thermal isolation structure 160 may be positionedbetween adjacent integrated circuit devices (shown between integratedcircuit devices 1101 and 1102, and between integrated circuit devices1102 and 1103), but, of course, offset from the integrated circuitdevices 1101, 1102, and 1103 in the z-direction. The positioning of thethermal isolation structures 160 allows for heat transfer away from eachof the plurality of integrated circuit devices, such as in a z-directionwithin the thermally conductive structure 150, while substantiallypreventing heat transfer in either the x-direction and/or they-direction (see FIG. 2) between integrated circuit devices 1101, 1102,and 1103, such that thermal cross-talk between integrated circuitdevices 1101, 1102, and 1103 is reduced.

In the embodiment illustrated in FIG. 1, the trench 170 may be unfilled,such that the ambient atmosphere, which has low thermal conductivity(e.g. air at room temperature (25 degrees Celsius) has a thermalconductivity of about 0.026 W/m*K), acts as a thermal insulator betweenportions of the thermally conductive structure 150 on opposing sides ofthe trench 170. For the purposes of the present description, the term“thermally non-conductive”, “thermally insulative”, “thermal insulator”and/or “thermal insulator material” means a structure or material havinga thermal conductivity “k” of about 1.0 W/m*K or less.

The thermally conductive structure 150 may be made of any appropriatethermally conductive material. In one embodiment of the presentdescription, the thermally conductive structure 150 may be made of atleast one metal material, alloys of more than one metal, andcombinations thereof, including, but not limited to, copper, nickel,aluminum, alloys, laminated metals including coated materials (such asnickel coated copper), and the like. In another embodiment of thepresent description, the thermally conductive structure 150 may be madeof non-metallic, thermally conductive materials, such as graphite. Forthe purposes of the present description, the term “thermally conductivestructure” and/or “thermally conductive material”, as it relates to thethermally conductive structure 150, means a structure or material havinga thermal conductivity “k” of about 10 W/m*K or greater.

A thermal interface material 156, such as a grease or polymer having anenhanced thermal conductivity, may be disposed between the first surface152 of the thermally conductive structure 150 and a second surface 114(opposing the first surface 112) of each integrated circuit device 1101,1102, and 1103 to facilitate heat transfer therebetween, to compensatefor tolerances, and/or to compensate for any height (z-direction)differences between the integrated circuit device 1101, 1102, and 1103.The thermal interface material 156 may have an enhanced thermalconductivity “k” of about 2 to 3 W/m*K.

In one embodiment of the present description, the heat dissipationdevice 140 may include at least one footing 142 extending between thefirst surface 152 of the thermally conductive structure 150 and thefirst surface 122 of the substrate 120, wherein the heat dissipationdevice footing 142 may be attached to the substrate first surface 122with an attachment adhesive or sealant layer 144. As illustrated in FIG.1, the footing 142 may be a single material with the thermallyconductive structure 150, such as where the thermally conductivestructure 150 and the footing 142 are formed substantiallysimultaneously by a single process step, including but not limited tostamping, skiving, molding, and the like. In various embodiments, thefooting 142 may be a plurality of walls, pillars, or the like, or may bea single “picture frame” structure surrounding the integrated circuitdevices 1101, 1102, and 1103, as illustrated in FIG. 2. The attachmentadhesive or sealant layer 144 may be any appropriate material,including, but not limited to, silicones (such as polydimethylsiloxane),epoxies, and the like. It is understood that the footing 142 not onlysecures the heat dissipation 140 to the substrate 120, but alsomaintains the desired distance D between the first surface 152 of thethermally conductive structure 150 of the heat dissipation device 140and the second surfaces 114 of at least one of the integrated circuitdevices 1101, 1102, and 1103, usually measured from highest integratedcircuit device when their heights vary. This distance may be referred toas the “bond line thickness”.

It is understood that the second surface 154 of the thermally conductivestructure 150 of the heat dissipation device 140 may be in thermalcontact with an additional heat dissipation device (not shown),including but not limited to a heat pipe, a high surface areadissipation structure (such as a structure having fins orpillars/columns formed in a thermally conductive structure), a liquidcooling device, and the like, which may assist in removing heat from theheat dissipation device 140, as will be understood to those skilled inthe art.

It is further understood that an underfill material (not shown), such asan epoxy material, may be disposed between the integrated circuitdevices 1101, 1102, 1103 and the substrate first surface 122, andsurrounding the plurality of interconnects 126. The underfill material(not shown) may provide structural integrity and may preventcontamination, as will be understood to those skilled in the art.

FIG. 2 illustrates a cross-sectional view along line 2-2 of FIG. 1,wherein the integrated circuit devices 1101, 1102, and 1103 are shown inshadow lines for clarity. As shown in FIG. 2, each of the integratedcircuit devices 1101, 1102, and 1103 may have a periphery P1, P2, P3,respectively, which is defined by the sidewalls 116 (see FIG. 1) of eachof the integrated circuit devices 1101, 1102, and 1103. In oneembodiment, as shown in FIG. 2, the thermal isolation structure 160 maycomprise single, straight trenches 170 (extending in the y-direction)between adjacent integrated circuit devices (shown between integratedcircuit devices 1101 and 1102, and between integrated circuit devices1102 and 1103), such that the trenches are external to any of theperipheries P1, P2, P3, of the integrated circuit devices 1101, 1102,and 1103, respectively.

It is understood that the thermal isolation structures 160 may have anyappropriate configuration to most effectively reduce thermal cross-talkbetween any of the integrated circuit devices 1101, 1102, and 1103. Inanother embodiment, as shown in FIG. 3, the thermal isolation structures160 may comprise trenches 170 extending in both the x-direction and they-direction. In a further embodiment, as shown in FIG. 4, the thermalisolation structure 160 may comprise a trench 170 extending around atleast one periphery P1, P2, P3 of at least one of the integrated circuitdevices 1101, 1102, and 1103, respectively (shown in FIG. 4 assurrounding integrated circuit device 1102).

Although the embodiments illustrated herein show three integratedcircuit devices 1101, 1102, and 1103 aligned in the x-direction, it isunderstood that any appropriate number of integrated circuit devices maybe used in any appropriate configuration in both the x-direction and they-direction.

In another embodiment of the present description, the trenches 170 ofFIG. 1 may have a thermally insulative material 180 therein, as shown inFIG. 5. The use of the thermally insulative material 180 may assist inimproving the structural integrity of the heat dissipation device 140compared to the unfilled embodiment of FIG. 1. The thermally insulativematerial 180 may be made of any appropriate thermally insulativematerial, including, but not limited to, low conductivity polymers (suchas epoxies and silica-filled epoxies), ceramics, polymer/ceramiccomposites, and the like.

In an embodiment of the present description, as shown in FIG. 6, thethermal isolation structure 160 may extend entirely through thethermally conductive structure 150 from the first surface 152 of thethermally conductive structure 150 to the second surface 154 of thethermally conductive structure 150. Furthermore, the thermal isolationstructure 160 may vary in width W (see FIG. 1) as it extends through thethermally conductive structure 150. As illustrated in FIG. 6, an upperportion 160 b of the isolation structure 160 may have a width Wb that isgreater than a width Wa of the lower portion 160 a of the isolationstructure. This configuration is merely exemplary of how the shapewithin the thermally conductive structure 150 can be varied or adjustedto achieve a desired thermal performance for the heat dissipation device140.

Although the heat dissipation device 140 illustrated in FIG. 1 shows thefooting 142 as a single material with the thermally conductive structure150, the embodiments of the present description are not so limited. Asshown in FIG. 6, in further embodiments of the present description, thethermally conductive structure 150 may consist of at least two parts,wherein the thermally conductive structure 150 and the at least onefooting 142 are separate parts. As shown, the footing 142 may beattached to the first surface 152 of the thermally conductive structure150 with an adhesive or sealant layer 146. Although fabricating the heatdissipation device 140 as a multiple piece assembly, e.g. the thermallyconductive structure 150 and the footing 142 will take additionalassembly steps, it may make the fabrication of the heat dissipationdevice 140 easier, as a whole. Again, the footing 142 may be a pluralityof walls, pillars, or the like, or may be a single “picture frame”structure surrounding the integrated circuit devices 1101, 1102, and1103. The adhesive or sealant layer 146 may be any appropriate material,including, but not limited to silicones (such as polydimethylsiloxane),epoxies, and the like. In one embodiment, the adhesive or sealant layer146 may be the same as the attachment adhesive or sealant layer 144.

Although the illustrations of FIGS. 1-6 show a planar configuration forthe integrated circuit devices 1101, 1102, and 1103, various embodimentsof the present configuration are not so limited. As shown in FIG. 7, theintegrated circuit devices 1101, 1102, 1103, and 1104 may be assembledin a stacked configuration. As illustrated, the substrate 120 mayinclude a cavity 124 formed therein and at least one integrated circuitdevice, illustrated as element 1104, may be at least partially disposedin the cavity 124. As with FIG. 1, the integrated circuit device 1104may be electrically attached to the substrate 120 within the cavity 124through device-to-substrate interconnects 126 extending from the firstsurface 112 of the integrated circuit 1104 and at least one of theintegrated circuit devices 1101, 1102, 1103 may be electrically attachedto the second surface 114 of integrated circuit device 1104, such aswith high density interconnects 182, as known in the art, which may bein contact with integrated circuits (not shown) with through-siliconvias (not shown) within the integrated circuit device 1104.

In a further embodiment shown in FIG. 8, a stack configuration ofintegrated circuit devices 1101, 1102, 1103, and 1104 may be disposed ina mold material 192 to form a molded package 190. As with FIG. 7, theintegrated circuit device 1104 may be electrically attached to thesubstrate 120 through device-to-substrate interconnects 126 from thefirst surface 112 of the integrated circuit 1104 and at least one of theintegrated circuit devices 1101, 1102, 1103 may be electrically attachedto the second surface 114 of integrated circuit device 1104, such aswith high density interconnects 182, which may be in contact withintegrated circuits (not shown) with through-silicon vias (not shown)within the integrated circuit device 1104. At least one of theintegrated circuit devices (illustrated as elements 1101 and 1103) maybe electrically attached to the substrate 120 throughdevice-to-substrate interconnects 126 which are electrically attached tothrough-mold interconnects 196 and device interconnect 194 within themolded package 190. The processes for the fabrication of a moldedpackage 190 are well known in the art and for purposes of brevity andconciseness will not be described herein.

FIG. 9 is a flow chart of a process 200 of fabricating an integratedcircuit structure according to an embodiment of the present description.As set forth in block 210, a substrate may be formed. A first integratedcircuit device may be formed having a first surface and an opposingsecond surface, as set forth in block 220. As set forth in block 230,the first surface of the first integrated circuit device may be attachedto the substrate. A second integrated circuit device may be formedhaving a first surface and an opposing second surface, as set forth inblock 240. As set forth in block 250, the first surface of the secondintegrated circuit device may be attached to the substrate. A heatdissipation device may be formed including a thermally conductivestructure having a first surface and at least one thermal isolationstructure extending at least partially through the thermally conductivestructure from the first surface thereof, as set forth in block 260. Asset forth in block 270, the heat dissipation device may be thermallycoupled to the second surface of the first integrated circuit device andto the second surface of the second integrated circuit device, whereinthe thermal isolation structure is positioned between the firstintegrated circuit device and the second integrated circuit device.

FIG. 10 illustrates an electronic or computing device 300 in accordancewith one implementation of the present description. The computing device300 may include a housing 301 has a board 302 disposed therein. Theboard 302 may include a number of integrated circuit components,including but not limited to a processor 304, at least one communicationchip 306A, 306B, volatile memory 308 (e.g., DRAM), non-volatile memory310 (e.g., ROM), flash memory 312, a graphics processor or CPU 314, adigital signal processor (not shown), a crypto processor (not shown), achipset 316, an antenna, a display (touchscreen display), a touchscreencontroller, a battery, an audio codec (not shown), a video codec (notshown), a power amplifier (AMP), a global positioning system (GPS)device, a compass, an accelerometer (not shown), a gyroscope (notshown), a speaker, a camera, and a mass storage device (not shown) (suchas hard disk drive, compact disk (CD), digital versatile disk (DVD), andso forth). Any of the integrated circuit components may be physicallyand electrically coupled to the board 302. In some implementations, atleast one of the integrated circuit components may be a part of theprocessor 304.

The communication chip enables wireless communications for the transferof data to and from the computing device. The term “wireless” and itsderivatives may be used to describe circuits, devices, systems, methods,techniques, communications channels, etc., that may communicate datathrough the use of modulated electromagnetic radiation through anon-solid medium. The term does not imply that the associated devices donot contain any wires, although in some embodiments they might not. Thecommunication chip may implement any of a number of wireless standardsor protocols, including but not limited to Wi-Fi (IEEE 802.11 family),WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE),Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT,Bluetooth, derivatives thereof, as well as any other wireless protocolsthat are designated as 3G, 4G, 5G, and beyond. The computing device mayinclude a plurality of communication chips. For instance, a firstcommunication chip may be dedicated to shorter range wirelesscommunications such as Wi-Fi and Bluetooth and a second communicationchip may be dedicated to longer range wireless communications such asGPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

The term “processor” may refer to any device or portion of a device thatprocesses electronic data from registers and/or memory to transform thatelectronic data into other electronic data that may be stored inregisters and/or memory.

At least one of the integrated circuit components may include a thermalsolution comprising a heat dissipation device, comprising a thermallyconductive structure having a first surface and at least one thermalisolation structure extending at least partially through the thermallyconductive structure from the first surface thereof, as described in thepresent description.

In various implementations, the computing device may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra-mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice may be any other electronic device that processes data.

It is understood that the subject matter of the present description isnot necessarily limited to specific applications illustrated in FIGS.1-10. The subject matter may be applied to other integrated circuitdevices and assembly applications, as well as any appropriate electronicapplication, as will be understood to those skilled in the art.

Having thus described in detail embodiments of the present invention, itis understood that the invention defined by the appended claims is notto be limited by particular details set forth in the above description,as many apparent variations thereof are possible without departing fromthe spirit or scope thereof

What is claimed is:
 1. A heat dissipation device, comprising: athermally conductive structure having a first surface; and at least onethermal isolation structure extending at least partially through thethermally conductive structure from the first surface thereof.
 2. Theheat dissipation device of claim 1, wherein the at least one thermalisolation structure comprises at least one trench extending at leastpartially through the thermally conductive structure.
 3. The heatdissipation device of claim 2, further comprising a thermallynon-conductive material in the at least one trench.
 4. The heatdissipation device of claim 3, wherein the thermally non-conductivematerial is selected from the group consisting of epoxies, ceramics, andcomposites of polymers and ceramics.
 5. An integrated circuit structure,comprising: a substrate; a first integrated circuit device having afirst surface and an opposing second surface, wherein the first surfaceof the first integrated circuit device is electrically attached to thesubstrate; a second integrated circuit device having a first surface andan opposing second surface, wherein the first surface of the secondintegrated circuit device is electrically attached to the substrate; aheat dissipation device thermally coupled to the second surface of thefirst integrated circuit device and the second surface of the secondintegrated circuit device, wherein the heat dissipation device comprisesa thermally conductive structure having a first surface, and at leastone thermal isolation structure extending at least partially through thethermally conductive structure from the first surface thereof, andwherein the thermal isolation structure is positioned between the firstintegrated circuit device and the second integrated circuit device. 6.The integrated circuit structure of claim 5, wherein the at least onethermal isolation structure comprises at least one trench extending atleast partially through the thermally conductive structure.
 7. Theintegrated circuit structure of claim 6, further comprising a thermallynon-conductive material in the at least one trench.
 8. The integratedcircuit structure of claim 7, wherein the thermally non-conductivematerial is selected from the group consisting of epoxies, ceramics, andcomposites of polymers and ceramics.
 9. The integrated circuit structureof claim 5, further comprising a third integrated circuit device havinga first surface and an opposing second surface, wherein the thirdintegrated circuit is in a stacked configuration with the firstintegrated circuit and the second integrated circuit, wherein the firstsurface of the third integrated circuit device is electrically attachedto the substrate, and wherein at least one of the first integratedcircuit device and the second integrated circuit device is electricallyconnected to the third integrated circuit device.
 10. The integratedcircuit structure of claim 9, wherein the substrate further includes acavity and wherein the third integrated circuit is disposed at leastpartially in the cavity.
 11. The integrated circuit structure of claim9, wherein the first integrated circuit device, the second integratedcircuit device, and the third integrated circuit device are embedded ina mold material.
 12. An electronic system, comprising: a housing; aboard in the housing; a first integrated circuit device having a firstsurface and an opposing second surface, wherein the first surface of thefirst integrated circuit device is electrically attached to the board; asecond integrated circuit device having a first surface and an opposingsecond surface, wherein the first surface of the second integratedcircuit device is electrically attached to the board; a heat dissipationdevice thermally coupled to the second surface of the first integratedcircuit device and the second surface of the second integrated circuitdevice, wherein the heat dissipation device comprises a thermallyconductive structure having a first surface, and at least one thermalisolation structure extending at least partially through the thermallyconductive structure from the first surface thereof, and wherein thethermal isolation structure is positioned between the first integratedcircuit device and the second integrated circuit device.
 13. Theelectronic system of claim 12, wherein the at least one thermalisolation structure comprises at least one trench extending at leastpartially through the thermally conductive structure.
 14. The electronicsystem of claim 13, further comprising a thermally non-conductivematerial in the at least one trench.
 15. The electronic system of claim14, wherein the thermally non-conductive material is selected from thegroup consisting of epoxies, ceramics, and composites of polymers andceramics.
 16. The electronic system of claim 12, further comprising athird integrated circuit device having a first surface and an opposingsecond surface, wherein the third integrated circuit is in a stackedconfiguration with the first integrated circuit and the secondintegrated circuit, wherein the first surface of the third integratedcircuit device is electrically attached to the board, and wherein atleast one of the first integrated circuit device and the secondintegrated circuit device is electrically connected to the thirdintegrated circuit device.
 17. The electronic system of claim 16,wherein the board further includes a cavity and wherein the thirdintegrated circuit is disposed at least partially in the cavity.
 18. Theelectronic system of claim 16, wherein the first integrated circuitdevice, the second integrated circuit device, and the third integratedcircuit device are embedded in a mold material.
 19. A method of formingan integrated circuit structure, comprising: forming a substrate;forming a first integrated circuit device having a first surface and anopposing second surface; electrically attaching the first surface of thefirst integrated circuit device to the substrate; forming a secondintegrated circuit device having a first surface and an opposing secondsurface electrically attaching the first surface of the secondintegrated circuit device to the substrate; forming a heat dissipationdevice comprising a thermally conductive structure having a firstsurface, and at least one thermal isolation structure extending at leastpartially through the thermally conductive structure from the firstsurface thereof; and thermally coupling the heat dissipation device tothe second surface of the first integrated circuit device and to thesecond surface of the second integrated circuit device wherein thethermal isolation structure is positioned between the first integratedcircuit device and the second integrated circuit device.
 20. The methodof claim 19, wherein the at least one thermal isolation structure isformed from at least one trench extending at least partially through thethermally conductive structure.
 21. The method of claim 20, furthercomprising disposing a thermally non-conductive material in the at leastone trench.
 22. The method of claim 21, wherein disposing the thermallynon-conductive material comprises disposing a material selected from thegroup consisting of epoxies, ceramics, and composites of polymers andceramics.
 23. The method of claim 19, further comprising: forming athird integrated circuit device having a first surface and an opposingsecond surface; positioning the third integrated circuit in a stackedconfiguration with the first integrated circuit and the secondintegrated circuit; electrically attaching the first surface of thethird integrated circuit device to the substrate; and electricallyconnecting at least one of the first integrated circuit device and thesecond integrated circuit device to the third integrated circuit device.24. The method of claim 23, wherein forming the substrate furtherincludes forming a cavity therein; and further comprising disposing atleast a portion of the third integrated circuit device in the cavity.25. The method of claim 23, further comprising embedding the firstintegrated circuit device, the second integrated circuit device, and thethird integrated circuit device in a mold material.